Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
Increasing carrier lifetimes for high-voltage silicon carbide
Figure 1 from Breakdown characteristics of 12–20 kV-class 4H-SiC PiN diodes with improved junction termination structures | Semantic Scholar
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation | Scientific Reports
Design and Optimization of Silicon Carbide Schottky Diode - Technical Articles
4.4.2.2 PiN Diode Simulation
Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation | Scientific Reports
SiC extreme - Chair of Physics of Electrotechnology
4H-SiC p-i-n diode schematic cross section. Plot not in scale. | Download Scientific Diagram
Radiation tolerance analysis of 4H-SiC PIN diode detectors for neutron irradiation - ScienceDirect
Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth - Fukaya - 2022 - physica status solidi (b) - Wiley Online Library
Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics | SpringerLink
SiC PiN Diodes - GeneSiC | Mouser
Forward I–V characteristics of 4H-SiC PiN diodes after each RTA at... | Download Scientific Diagram
FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes - ScienceDirect
Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode | Scientific.Net
V Si in SiC p-i-n junction device. (a) Schematic of the p-i-n diode... | Download Scientific Diagram
PDF) A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV | kamel BESBES - Academia.edu
Advantages of the 1200 V SiC Schottky Diode with MPS Design
Figure 1 from Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system | Semantic Scholar
Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures
4.4.2.2 PiN Diode Simulation
Energies | Free Full-Text | 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization
